GaN-on-SiC behind 9-10GHz 200W pulse amplifier
Measuring ~178 x 102 x 25mm, it could actually ship pulses as much as 500μs lengthy and responsibility cycles as much as 20%. The units can sometimes hit 250W with -6dBm on the enter (200W is the minimal all can obtain) when provided with 48Vdc (42 to 50Vdc). Nominal acquire is 60dB with ±3dB flatness.
RF enter and output are 50Ω feminine SMA.
“This compact module utilises the newest high-power RF GaN-on-SiC transistors, and likewise options built-in management and monitoring, with safety to assist guarantee excessive availability,” in keeping with Richardson RFPD, which is stocking the half.
A heatsink is required, however not provided – permissible case temperature is -40 to +85°C. Temperature is reported on an analogue interface, an analogue enter units inside attenuation (15dB vary), and an on-off enter permits the amplifiers output (250ns disable-enable).
RS-485 digital management (through D-Sub male 17pin) can be doable, enabled by leaving each the allow and attenuation inputs open-circuit or grounded.
Protections embrace: over-temperature, over-voltage, reverse-polarity and over-current.